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Datasheet File OCR Text: |
to-92 plastic-encapsulate transistors 2SC1318A transistor (npn) features collector o utput c apacitance : c ob =11 pf (typ),20 pf (max) maximum ratings ( t a =25 unless otherwise note ) symbol parameter value unit v cbo collector-base voltage 80 v v ceo collector-emitter voltage 70 v v ebo emitter-base voltage 5 v i c collector current -continuous 500 ma p c collector power dissipation 750 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =10 a,i e =0 80 v collector-emitter breakdown voltage v (br)ceo i c =2ma,i b =0 70 v emitter-base breakdown voltage v (br)ebo i e =10 a,i c =0 5 v collector cut-off current i cbo v cb =20v,i e =0 0.1 a h fe(1) v ce =10v,i c =150ma 85 340 dc current gain h fe(2) v ce =10v,i c =500ma 40 collector-emitter saturation voltage v ce(sat) i c =300ma,i b =30ma 0.6 v base-emitter saturation voltage v be(sat) i c =300ma,i b =30ma 1.5 v transition frequency f t v ce =10v,i c =50ma,f=200mhz 120 mhz collector output capacitance c ob v cb =10v,i e =0,f=1mhz 11 20 pf classification of h fe(1) rank q r s range 85-170 120-240 170-340 to-92 1. emitter 2. collector 3. base 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,may,2011
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